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| CMST2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for small signal, general purpose and switching applications. MARKING CODE: 2FC SOT-323 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA 60 60 5.0 600 275 -65 to +150 455 UNITS V V V mA mW C C/W ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE fT TEST CONDITIONS VCB=50V VCB=50V, TA=125C VCE=30V, VEB=0.5V IC=10A IC=10mA IE=10A IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=50mA, f=100MHz 75 100 100 100 50 200 MHz 300 MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6 UNITS nA A nA V V V V V V V R4 (9-February 2010) CMST2907A SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25C unless otherwise noted) SYMBOL Cob Cib ton td tr toff ts tf TEST CONDITIONS VCB=10V, IE=0, f=1.0MHz VEB=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5, IC=150mA, VCC=30V, VBE=0.5, IC=150mA, VCC=30V, VBE=0.5, IC=150mA, IB1=15mA IB1=15mA IB1=15mA MAX 8.0 30 45 10 40 100 80 30 UNITS pF pF ns ns ns ns ns ns VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA SOT-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: 2FC R4 (9-February 2010) w w w. c e n t r a l s e m i . c o m |
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